2SK2953(F) Toshiba, 2SK2953(F) Datasheet - Page 5

• Manufacturer Part Number: 2SK2953(F)
• Description: MOSFET N-CH 600V 15A 2-16F1B
• Manufacturer: Toshiba

Specifications of 2SK2953(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3520pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: 2-16F1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 90000 mW
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK2953(F); 2SK2953F

R
V
G
DD
5
= 25 Ω
= 90 V, L = 7.98 mH
E
AS
=
1
2
⋅
L
⋅
I
2
⋅
⎛
⎜
⎝
B
2009-09-29
2SK2953
VDSS
B
VDSS
−
V
DD
⎞
⎟
⎠