2SK2231(TE16R1,NQ) Toshiba, 2SK2231(TE16R1,NQ) Datasheet - Page 5

• Manufacturer Part Number: 2SK2231(TE16R1,NQ)
• Description: MOSFET N-CH 60V 5A 2-7J1B
• Manufacturer: Toshiba

Specifications of 2SK2231(TE16R1,NQ)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 370pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: 2-7J1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @10V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 20 W
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK2231TE16RQTR

R
V
G
DD
5
= 25 Ω
= 25 V, L = 7 mH
E
AS
=
1
2
⋅
L
⋅
I
2
⋅
⎛
⎜
⎝
B
2010-02-05
VDSS
2SK2231
B
VDSS
−
V
DD
⎞
⎟
⎠