SSM6J53FE(TE85L,F) Toshiba, SSM6J53FE(TE85L,F) Datasheet - Page 3

• Manufacturer Part Number: SSM6J53FE(TE85L,F)
• Description: MOSFET P-CH 20V 1.8A ES6
• Manufacturer: Toshiba

Specifications of SSM6J53FE(TE85L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 136 mOhm @ 1A, 2.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 10.6nC @ 4V
• Input Capacitance (ciss) @ Vds: 568pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SSM6J53FE(TE85LF)TR

450
400
350
300
250
200
150
100
400
300
200
100
50
0
0
0
-3.5
-2.5
-1.5
-0.5
0
-4
-3
-2
-1
Common Source
Ta = 25 °C
0
0
Gate - Source voltage V
-4 V
Drain - Source voltage V
-2
-1
Drain current I
-0.5
R
R
DS (ON)
DS (ON)
-1.8 V
V GS = -1.5 V
25 °C
-2.5 V
-2
I
D
-1.8 V
-2.5 V
-4
– V
– V
– I
-1
D
D
DS
GS
VGS = -1.2 V
(A)
GS
I D = -0.1 A
Common Source
-3
-6
Common Source
Ta = 25°C
DS
Ta = 85 °C
−25 °C
-1.5
(V)
-1.5 V
(V)
-4
-8
-2
3
-10000
-1000
-0.01
-100
-0.1
400
300
200
100
-10
500
400
300
200
100
-1
0
−50
0
0
0
Common Source
V DS = -3 V
Common Source
-0.2
Gate - Source voltage V
Gate - Source voltage V
Ambient temperature Ta (°C)
Ta = 85 °C
-1.0 A / -1.8 V
-0.4
-2
0
R
-0.6
DS (ON)
R
DS (ON)
I
-1.0 A / -2.5 V
25 °C
D
I D = -0.1 A / V GS = -1.5 V
−25 °C
– V
-0.8
50
-4
GS
– V
25 °C
– Ta
-1.0
GS
I D = -1.0 A
Common Source
GS
GS
100
-1.2
-6
SSM6J53FE
Ta = 85 °C
(V)
(V)
−25 °C
-1.4
2007-11-01
-1.6
150
-8