IXFK44N60 IXYS, IXFK44N60 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFK44N60
Manufacturer Part Number
IXFK44N60
Description
MOSFET N-CH 600V 44A TO-264AA
Specifications of IXFK44N60
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
330nC @ 10V
Input Capacitance (ciss) @ Vds
8900pF @ 25V
Power - Max
560W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
45 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
44 A
Power Dissipation
560000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.13
Ciss, Typ, (pf)
8900
Qg, Typ, (nc)
330
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
Single MOSFET Die
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSM
AR
AS
D
GS
d
DSS
GS(th)
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
V
V
Note 1
V
Test Conditions
V
S
V
V
C
C
C
C
C
C
J
J
J
GS
GS
DS
GS
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= 10 V, I
= ±20 V, V
= V
= 0 V
DM
TM
, di/dt £ 100 A/ms, V
GS
DSS
, I
D
D
D
= 3mA
= 8mA
= 0.5 • I
G
DS
= 2 W
= 0
TO-264
PLUS 247
TO-264
D25
GS
= 1 MW
DD
£ V
T
T
(T
J
J
DSS
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
JM
IXFK 44N60
IXFX 44N60
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
0.4/6
Maximum Ratings
typ.
600
600
±20
±30
176
560
150
300
44
44
60
3
5
max.
Nm/lb.in.
±100 nA
130 mW
100 mA
10
4.5 V
6
2 mA
V/ns
mJ
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
J
g
g
TO-264 AA (IXFK)
G = Gate
S = Source
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• PLUS 247
• Space savings
• High power density
PLUS 247
rated
- easy to drive and to protect
power supplies
mounting
V
I
R
t
D25
rr
DS(on)
DSS
DS (on)
£ 250 ns
G
TM
TM
D
G
HDMOS
(IXFX)
package for clip or spring
D
= 600 V
=
= 130 mW
S
TM
D = Drain
TAB = Drain
process
44 A
98611B (7/00)
(TAB)
(TAB)
1 - 4
Related parts for IXFK44N60
IXFK44N60 Summary of contents
... GSS DSS DS DSS 0.5 • I DS(on Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFX 44N60 IXFK 44N60 Maximum Ratings 600 = 1 MW 600 GS ±20 ±30 44 176 £ DSS 560 -55 ... +150 150 -55 ...
... DSS D D25 65 0.22 0.15 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 100 V 1 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFK 44N60 IXFX 44N60 PLUS247 TM (IXFX) Outline ...
... J 2.0 1.6 1.2 0 Amperes D Figure 5. Drain Current vs. Case Temperature -50 -25 -50 - 100 125 150 75 100 125 150 Degrees C - Degrees © 2000 IXYS All rights reserved 10V vs 100 Figure 6. Admittance Curves IXFK 44N60 IXFX 44N60 Figure 2. Output Characteristics at 125 10V 125 C GS ...
... Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 125 0.2 0.4 0.6 0 Volts SD Figure 10. Transient Thermal Resistance 1.00 0.10 0.01 0. © 2000 IXYS All rights reserved Figure 8. Capacitance Curves 10000 1000 100 1.0 1 Pulse Width - Seconds IXFK 44N60 IXFX 44N60 Ciss f = 1MHz Coss Crss ...
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