IXFR80N50P IXYS, IXFR80N50P Datasheet - Page 3

• Manufacturer Part Number: IXFR80N50P
• Description: MOSFET N-CH 500V 45A ISOPLUS247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFR80N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 72 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 197nC @ 10V
• Input Capacitance (ciss) @ Vds: 12700pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 70 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 45 A
• Power Dissipation: 360000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 45
• Rds(on), Max, Tj=25°c, (?): 0.072
• Ciss, Typ, (pf): 12700
• Qg, Typ, (nc): 197
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 360
• Rthjc, Max, (ºc/w): 0.35
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
3.2
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
3
2
1
0
0
0
V
20
GS
Fig. 3. Output Char acte ris tics
2
Fig. 5. R
Fig. 1. Output Char acte r is tics
1
= 10V
40
I
D
4
= 40 A V alue vs . I
60
2
DS(on)
V
I
D S
V
D
@ 125
V
D S
@ 25
- A mperes
6
80
V
GS
- V olts
GS =
Nor m alize d to
- V olts
3
= 10V
100
°
°
10V
8V
7V
C
C
8
120
4
T
10
7V
6V
5V
J
T
D
6V
5V
J
= 125
= 25
140
5
°
°
12
C
C
160
180
14
6
180
160
140
120
100
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
45
40
35
30
25
20
15
10
80
60
40
20
5
0
0
1
-50
-50
Fig. 2. Exte nde d Output Characte r is tics
0
Fig. 4. R
V alue vs . Junction Te m pe ratur e
V
-25
-25
3
GS
Fig. 6. Dr ain Cur r e nt vs . Cas e
= 10V
V
6
GS
DS(on
T
0
0
T
C
J
= 10V
- Degrees Centigrade
- Degrees Centigrade
9
Te m pe r atur e
8V
)
25
25
Nor m alize d to I
@ 25
V
I
D
D S
1 2
= 80A
50
50
7V
6V
5V
- V olts
°
C
1 5
IXFR 80N50P
75
75
I
D
1 8
= 40A
100
100
D
21
= 40 A
125
125
24
150
150
27