IXFH10N100 IXYS, IXFH10N100 Datasheet - Page 3

MOSFET N-CH 1KV 10A TO-247AD

IXFH10N100

Manufacturer Part Number
IXFH10N100
Description
MOSFET N-CH 1KV 10A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH10N100

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Forward Transconductance Gfs (max / Min)
10 s
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Fall Time
32 ns
Rise Time
33 ns
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
10
Rds(on), Max, Tj=25°c, (?)
1.2
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
122
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH10N100
Manufacturer:
IXYS
Quantity:
15 500
Part Number:
IXFH10N100
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2004 IXYS All rights reserved
1.5
1.4
1.3
1.2
1.1
1.0
0.9
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
-50
0
0
Fig. 3
Fig. 1 Output Characteristics
Fig. 5 Drain Current vs.
T
J
= 25°C
-25
T
J
= 25°C
10N100
5
Case Temperature
12N100
5
0
R
DS(on)
T
25
I
C
10
D
V
- Degrees C
- Amperes
vs. Drain Current
DS
V
GS
10
- Volts
50
= 10V
15
75
V
GS
= 15V
100 125 150
15
20
V
GS
= 10V
7V
5V
6V
20
25
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
20
18
16
14
12
10
8
6
4
2
0
-50
-50
0
Fig. 4
Fig. 2 Input Admittance
Fig. 6 Temperature Dependence of
IXFH 10N100
IXFM 10N100
1
-25
-25
V
Breakdown and Threshold Voltage
GS(th)
2
Temperature Dependence
of Drain to Source Resistance
0
0
3
T
T
T
J
25
25
= 25°C
J
J
V
4
- Degrees C
- Degrees C
GS
I
D
50
50
- Volts
= 6A
5
6
75
75
7
100 125 150
100 125 150
IXFH 12N100
IXFM 12N100
BV
8
DSS
9
10

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