IXFK36N60P IXYS, IXFK36N60P Datasheet - Page 4

MOSFET N-CH 600V 36A TO-264

IXFK36N60P

Manufacturer Part Number
IXFK36N60P
Description
MOSFET N-CH 600V 36A TO-264
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFK36N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
102nC @ 10V
Input Capacitance (ciss) @ Vds
5800pF @ 25V
Power - Max
650W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Forward Transconductance Gfs (max / Min)
39 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
650 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
36
Rds(on), Max, Tj=25°c, (?)
0.19
Ciss, Typ, (pf)
5800
Qg, Typ, (nc)
102
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
650
Rthjc, Max, (ºc/w)
0.19
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFK36N60P
Manufacturer:
IXYS
Quantity:
2 000
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
100
55
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
10
5
0
0
3.5
0.4
0
f = 1MHz
0.5
5
4
T
J
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
T
= 125ºC
0.6
J
10
= 125ºC
-40ºC
4.5
25ºC
V
0.7
V
15
V
G S
S D
D S
- Volts
- Volts
0.8
20
- Volts
5
T
J
0.9
C oss
C rss
C iss
= 25ºC
25
5.5
30
1
6
1.1
35
1.2
6.5
40
1.00
0.10
0.01
70
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
0.1
Fig. 12. Maxim um Transient Therm al
0
0
T
J
V
I
I
D
G
10
= -40ºC
DS
125ºC
IXFH 36N60P IXFK 36N60P
= 18A
= 10mA
10
Fig. 8. Transconductance
25ºC
= 300V
20
Fig. 10. Gate Charge
Pulse Width - milliseconds
1
30
20
Q
Resistance
G
40
I
- nanoCoulombs
D
30
- Amperes
50
10
60
40
70
IXFT 36N60P
50
80
100
90 100 110
60
1000
70

Related parts for IXFK36N60P