IXFT44N50P IXYS, IXFT44N50P Datasheet - Page 4

MOSFET N-CH 500V 44A TO-268 D3

IXFT44N50P

Manufacturer Part Number
IXFT44N50P
Description
MOSFET N-CH 500V 44A TO-268 D3
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFT44N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
98nC @ 10V
Input Capacitance (ciss) @ Vds
5440pF @ 25V
Power - Max
650W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Forward Transconductance Gfs (max / Min)
32 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
44 A
Power Dissipation
650 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.14
Ciss, Typ, (pf)
5440
Qg, Typ, (nc)
98
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
650
Rthjc, Max, (ºc/w)
0.19
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFT44N50P
Manufacturer:
IXYS
Quantity:
15 500
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
140
120
100
100
65
60
55
50
45
40
35
30
25
20
15
10
80
60
40
20
10
5
0
0
3.5
0.4
0
f = 1 MHz
0.5
5
Fig. 9. Forward Voltage Drop of
4
0.6
10
Fig. 7. Input Admittance
T
Fig. 11. Capacitance
J
= 125ºC
4.5
- 40ºC
Intrinsic Diode
25ºC
T
0.7
J
15
V
V
V
= 125ºC
SD
GS
DS
- Volts
- Volts
- Volts
0.8
20
5
0.9
25
C iss
C oss
5.5
T
C rss
J
= 25ºC
30
1
6
1.1
35
1.2
6.5
40
1,000
100
60
55
50
45
40
35
30
25
20
15
10
10
10
5
0
9
8
7
6
5
4
3
2
1
0
1
0
10
0
T
J
R
Fig. 12. Forward-Bias Safe Operating Area
V
I
I
= - 40ºC
DS(on)
125ºC
D
G
DS
10
25ºC
= 22A
= 10mA
10
= 250V
Limit
20
IXFH44N50P IXFK 44N50P
Fig. 8. Transconductance
20
30
Q
Fig. 10. Gate Charge
G
I
- NanoCoulombs
D
V
40
- Amperes
DS
30
- Volts
DC
100
50
40
60
IXFT 44N50P
70
50
80
T
T
J
C
= 150ºC
= 25ºC
60
25µs
100µs
1ms
10ms
90
1000
100
70

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