IXTH10P60 IXYS, IXTH10P60 Datasheet - Page 3
![MOSFET P-CH 600V 10A TO-247AD](/photos/5/30/53063/to-247ad_sml.jpg)
IXTH10P60
Manufacturer Part Number
IXTH10P60
Description
MOSFET P-CH 600V 10A TO-247AD
Manufacturer
IXYS
Datasheet
1.IXTH10P60.pdf
(4 pages)
Specifications of IXTH10P60
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1 Ohms
Forward Transconductance Gfs (max / Min)
9 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 10 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-600
Id(cont), Tc=25°c, (a)
-10
Rds(on), Max, Tj=25°c, (?)
1
Ciss, Typ, (pf)
4700
Qg, Typ, (nc)
160
Trr, Typ, (ns)
500
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1152201
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTH10P60
Manufacturer:
IXYS
Quantity:
35 500
© 2010 IXYS CORPORATION, All Rights Reserved
Fig. 5. Drain Current vs. Case Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
-20
-15
-10
-12
-10
-5
Fig. 1. Output Characteristics at 25
-8
-6
-4
-2
0
0
-50
0
0
Fig. 3. R
V
-25
GS
T
J
= -10V
= 25
-5
O
0
C
T
T
DS(ON)
J
J
-5
T
= 150
= 25
I
D
25
C
V
- Amperes
- Degrees C
DS
O
O
C
C
vs. Drain Current
-10
- Volts
50
V
GS
75
-10
= -10V
-9V
-8V
-15
100 125 150
-6V
-7V
-5V
-15
-20
o
C
-12
-10
-15
-10
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 2. Output Characteristics at 125
-8
-6
-4
-2
-5
0
-4.5
0
0
-25
Fig. 6. Admittance Curves
T
V
J
-5.0
GS
= 125
0
= -10V
Fig. 4. R
-5
O
C
25
T
-5.5
V
J
V
- Degrees C
I
GS
I
D
DS
D
= -10A
= -5A
50
- Volts
-10
T
- Volts
DS(ON)
J
T
= 125
J
V
= 25
-6.0
GS
75
= -10V
o
o
C
C
vs. T
-9V
-8V
-7V
100
-15
T
-6.5
J
= -40
J
IXTH10P60
-6V
IXTT10P60
-5V
125
o
C
-7.0
150
-20
o
C