IXTH10P60 IXYS, IXTH10P60 Datasheet - Page 3

• Manufacturer Part Number: IXTH10P60
• Description: MOSFET P-CH 600V 10A TO-247AD
• Manufacturer: IXYS

Specifications of IXTH10P60

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Forward Transconductance Gfs (max / Min): 9 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 10 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -600
• Id(cont), Tc=25°c, (a): -10
• Rds(on), Max, Tj=25°c, (?): 1
• Ciss, Typ, (pf): 4700
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): 500
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1152201

© 2010 IXYS CORPORATION, All Rights Reserved
Fig. 5. Drain Current vs. Case Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
-20
-15
-10
-12
-10
-5
Fig. 1. Output Characteristics at 25
-8
-6
-4
-2
0
0
-50
0
0
Fig. 3. R
V
-25
GS
T
J
= -10V
= 25
-5
O
0
C
T
T
DS(ON)
J
J
-5
T
= 150
= 25
I
D
25
C
V
- Amperes
- Degrees C
DS
O
O
C
C
vs. Drain Current
-10
- Volts
50
V
GS
75
-10
= -10V
-9V
-8V
-15
100 125 150
-6V
-7V
-5V
-15
-20
o
C
-12
-10
-15
-10
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 2. Output Characteristics at 125
-8
-6
-4
-2
-5
0
-4.5
0
0
-25
Fig. 6. Admittance Curves
T
V
J
-5.0
GS
= 125
0
= -10V
Fig. 4. R
-5
O
C
25
T
-5.5
V
J
V
- Degrees C
I
GS
I
D
DS
D
= -10A
= -5A
50
- Volts
-10
T
- Volts
DS(ON)
J
T
= 125
J
V
= 25
-6.0
GS
75
= -10V
o
o
C
C
vs. T
-9V
-8V
-7V
100
-15
T
-6.5
J
= -40
J
IXTH10P60
-6V
IXTT10P60
-5V
125
o
C
-7.0
150
-20
o
C