IXFH26N50P IXYS, IXFH26N50P Datasheet - Page 5
![MOSFET N-CH 500V 26A TO-247](/photos/5/50/55053/ixfh26n50p_sml.jpg)
IXFH26N50P
Manufacturer Part Number
IXFH26N50P
Description
MOSFET N-CH 500V 26A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFH26N50P.pdf
(5 pages)
Specifications of IXFH26N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
5.5V @ 4mA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
26 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
26 A
Power Dissipation
400000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
26
Rds(on), Max, Tj=25°c, (?)
0.23
Ciss, Typ, (pf)
3600
Qg, Typ, (nc)
60
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
0.010
0.0001
0.001
0.01
0.1
1
10
Pulse W idth - Seconds
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