IRFP450 IXYS, IRFP450 Datasheet - Page 2
![MOSFET N-CH 500V 14A TO-247AD](/photos/5/30/53063/to-247ad_sml.jpg)
IRFP450
Manufacturer Part Number
IRFP450
Description
MOSFET N-CH 500V 14A TO-247AD
Manufacturer
IXYS
Datasheet
1.IRFP450.pdf
(2 pages)
Specifications of IRFP450
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Forward Transconductance Gfs (max / Min)
9.3 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
190 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
14
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
110
Trr, Typ, (ns)
500
Pd, (w)
190
Rthjc, Max, (k/w)
0.65
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFP450X
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP450
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFP450
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFP450-E
Manufacturer:
IR
Quantity:
5 225
Company:
Part Number:
IRFP4502C
Manufacturer:
PHI
Quantity:
5 510
Company:
Part Number:
IRFP450A
Manufacturer:
FAIRCHILD
Quantity:
3 600
Part Number:
IRFP450A
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFP450APBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
© 2000 IXYS All rights reserved
S
SM
f
d(on)
r
d(off)
rr
fs
SD
iss
oss
rss
thJC
thCK
g(on)
gs
gd
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t 300 s, duty cycle d 2 %
I
F
F
GS
DS
= I
= I
S
S
= 0 V
= 10 V; I
V
V
R
V
, -di/dt = 100 A/ s, V
, V
GS
GS
GS
G
= 6.2
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 8.4 A, pulse test
(External)
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
R
= 100 V
DSS
DSS
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
(T
(T
, I
, I
J
J
JM
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
D
D
= 14 A
= 14 A
4,881,106
4,931,844
min.
min.
9.3
Characteristic Values
Characteristic Values
5,017,508
5,034,796
2800
typ.
typ.
0.24
500
300
150
110
18
47
92
44
15
50
0.65
max.
max.
150
20
80
5,049,961
5,063,307
1.4
14
56
K/W
K/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
5,187,117
5,237,481
TO-247 AD Outline
Terminals: 1 - Gate
5,486,715
5,381,025
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
S
1
2
1
2
P
3 - Source
20.80 21.46
15.75 16.26
19.81 20.32
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
1
.4
2
Max.
2.13
3.12
4.50
3.65
5.49
2.54
5.72 0.205 0.225
6.40 0.232 0.252
3
5.3
2.6
1.4
2 - Drain
Tab - Drain
.8
IRFP 450
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
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