IXTH6N50D2 IXYS, IXTH6N50D2 Datasheet - Page 3

• Manufacturer Part Number: IXTH6N50D2
• Description: MOSFET N-CH 500V 6A TO247
• Manufacturer: IXYS

Specifications of IXTH6N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 500 mOhm @ 3A, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6A
• Gate Charge (qg) @ Vgs: 96nC @ 5V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vds, Max, (v): 500
• Id(on), Min, (a): 6
• Rds(on), Max, (?): 0.5
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 2800
• Crss, Typ, (pf): 64
• Qg, Typ, (nc): 96
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.41
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2009 IXYS CORPORATION, All Rights Reserved
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0.0
0
0
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
100
0.5
1
Fig. 5. Drain Current @ T
200
1.0
V
2
V
V
DS
DS
DS
- Volts
- Volts
V
- Volts
GS
300
= 5V
3V
2V
1V
V
1.5
GS
3
-2V
-1V
0V
= 5V
400
2V
1V
J
= 100ºC
-1V
-2V
J
0V
J
= 125ºC
= 25ºC
2.0
V
4
GS
500
= -2.50V
-2.75V
-3.75V
-4.00V
-3.00V
-3.25V
-3.50V
600
2.5
5
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
40
35
30
25
20
15
10
5
0
-4.2
0
0
Fig. 2. Extended Output Characteristics @ T
Fig. 6. Dynamic Output Resistance vs. Gate Voltage
-4.0
100
5
-3.8
Fig. 4. Drain Current @ T
IXTA6N50D2 IXTP6N50D2
-3.6
T
J
200
10
= 100ºC
-3.4
V
V
DS
DS
V
-3.2
GS
- Volts
- Volts
300
V
15
- Volts
GS
-3.0
T
= 5V
J
4V
3V
-1V
-2V
2V
1V
= 25ºC
0V
-2.8
400
IXTH6N50D2
20
J
= 25ºC
∆
V
-2.6
DS
= 350V - 100V
V
GS
-2.4
J
500
25
= - 2.25V
= 25ºC
- 2.50V
- 2.75V
- 3.00V
- 3.25V
- 3.50V
- 3.75V
-2.2
-2.0
600
30