IRF2907ZS-7PPBF International Rectifier, IRF2907ZS-7PPBF Datasheet - Page 4

• Manufacturer Part Number: IRF2907ZS-7PPBF
• Description: MOSFET N-CH 75V 160A D2PAK7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF2907ZS-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 7580pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Current, Drain: 160 A
• Gate Charge, Total: 170 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 300 W
• Resistance, Drain To Source On: 3 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 92 ns
• Time, Turn-on Delay: 21 ns
• Transconductance, Forward: 94 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
4
1000
1000
100
100
0.1
10
1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
0.2
T J = 175°C
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.4
C rss
C iss
C oss
0.6
f = 1 MHZ
10
0.8
T J = 25°C
1.0
V GS = 0V
1.2
100
1.4
10000
1000
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0.1
0
Fig 6. Typical Gate Charge vs.
I D = 110A
Tc = 25°C
Tj = 175°C
Single Pulse
LIMITED BY PACKAGE
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
50
V DS = 60V
V DS = 38V
V DS = 15V
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
1msec
10.0
www.irf.com
10msec
100µsec
DC
150
100.0
200