IXTP10P50P IXYS, IXTP10P50P Datasheet - Page 6
IXTP10P50P
Manufacturer Part Number
IXTP10P50P
Description
MOSFET P-CH 500V 10A TO-220
Manufacturer
IXYS
Series
PolarP™r
Datasheet
1.IXTP10P50P.pdf
(6 pages)
Specifications of IXTP10P50P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2840pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Vdss, Max, (v)
-500
Id(cont), Tc=25°c, (a)
-10
Rds(on), Max, Tj=25°c, (?)
1
Ciss, Typ, (pf)
2670
Qg, Typ, (nc)
50
Trr, Typ, (ns)
414
Pd, (w)
300
Rthjc, Max, (k/w)
0.5
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.00
0.10
0.01
0.0001
0.001
Fig. 13. Maximum Transient Thermal Impedance
0.01
Pulse Width - Seconds
0.1
IXTA10P50P IXTH10P50P
IXTP10P50P IXTQ10P50P
1
IXYS REF: T_10P50P(B5)5-21-08-B
10