IXTP76P10T IXYS, IXTP76P10T Datasheet - Page 6

• Manufacturer Part Number: IXTP76P10T
• Description: MOSFET P-CH 100V 76A TO-220
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTP76P10T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 76A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 197nC @ 10V
• Input Capacitance (ciss) @ Vds: 13700pF @ 25V
• Power - Max: 298W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.024 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 76 A
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -76
• Rds(on), Max, Tj=25°c, (?): 0.025
• Ciss, Typ, (pf): 13700
• Qg, Typ, (nc): 197
• Trr, Typ, (ns): 70
• Trr, Max, (ns): -
• Pd, (w): 298
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTA76P10T IXTP76P10T
IXTH76P10T
Fig. 19. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_76P10T(A6)11-08-10-A