IRF1324LPBF International Rectifier, IRF1324LPBF Datasheet - Page 2
![MOSFET N-CH 24V 195A TO262](/photos/5/32/53250/to-262_sml.jpg)
IRF1324LPBF
Manufacturer Part Number
IRF1324LPBF
Description
MOSFET N-CH 24V 195A TO262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF1324STRLPBF.pdf
(10 pages)
Specifications of IRF1324LPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.65 mOhm @ 195A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
195A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
7590pF @ 24V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
340 A
Power Dissipation
300 W
Mounting Style
Through Hole
Gate Charge Qg
160 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
∆V
Static @ T
V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
sync
rr
above this value.
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
2
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
temperature.
Symbol
Symbol
Symbol
R
(BR)DSS
G
eff. (ER) Effective Output Capacitance (Energy Related) –––
eff. (TR) Effective Output Capacitance (Time Related)
= 25Ω, I
/∆T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 195A, V
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
J
=10V. Part not recommended for use
= 25°C, L = 0.014mH
Ãd
Parameter
Parameter
g
- Q
gd
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
24
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
I
C
as C
C
mended footprint and soldering techniques refer to application note #AN-994.
SD
oss
oss
θ
oss
≤ 195A, di/dt ≤ 450A/µs, V
7590
3440
1960
4700
4490
–––
–––
–––
–––
–––
–––
–––
160
190
120
––– 350
–––
–––
160
430
1.3
2.3
7.7
eff. (TR) is a fixed capacitance that gives the same charging time
oss
22
84
49
76
17
83
46
71
eff. (ER) is a fixed capacitance that gives the same energy as
while V
while V
1420
1.65
-200
–––
––– mV/°C
250
200
–––
–––
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
DS
4.0
1.3
20
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
mΩ
µA
nA
nC
nC
pF
ns
ns
V
V
Ω
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0 MHz, See Fig. 5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 195A
= 195A, V
= 195A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
DD
= 2.7Ω
= V
= 24V, V
= 24V, V
= 10V, I
= 12V
= 24V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 16V
= 10V
= 0V
= 0V, V
= 0V, V
≤ V
GS
(BR)DSS
, I
D
g
g
D
S
DSS
DS
DS
D
D
DS
= 250µA
GS
GS
= 195A, V
= 250µA
= 195A
= 195A
DSS
= 0V to 19V
= 0V to 19V
, T
.
=0V, V
Conditions
Conditions
Conditions
= 0V
= 0V, T
J
.
V
I
di/dt = 100A/µs
F
≤ 175°C.
R
= 195A
D
= 20V,
g
GS
= 5.0mA
J
GS
= 125°C
= 10V
= 0V
i
h
, See Fig. 11
www.irf.com
d
g
G
g
D
S