IRLR7833 International Rectifier, IRLR7833 Datasheet - Page 4

• Manufacturer Part Number: IRLR7833
• Description: MOSFET N-CH 30V 140A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR7833

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 140A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4010pF @ 15V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR7833

IRLR/U7833
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1000.00
4
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10.00
100
1.00
0.10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
C rss
V DS , Drain-to-Source Voltage (V)
C iss
C oss
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
V SD , Source-to-Drain Voltage (V)
Forward Voltage
0.5
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
2.5
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1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
1
Fig 6. Typical Gate Charge vs.
I D = 12A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 24V
V DS = 15V
10
20
10msec
100µsec
1msec
30
100
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40
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