IRFB31N20DPBF International Rectifier, IRFB31N20DPBF Datasheet - Page 3
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IRFB31N20DPBF
Manufacturer Part Number
IRFB31N20DPBF
Description
MOSFET N-CH 200V 31A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFB31N20DPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
82 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
107nC @ 10V
Input Capacitance (ciss) @ Vds
2370pF @ 25V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Current, Drain
31 A
Gate Charge, Total
70 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
0.082 Ohm
Resistance, Thermal, Junction To Case
0.75 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
26 ns
Time, Turn-on Delay
16 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
31 A
Mounting Style
Through Hole
Gate Charge Qg
70 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB31N20DPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB31N20DPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
1000
100
0.1
1000
10
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
0.1
1
10
1
5
0.1
TOP
BOTTOM
T = 175 C
J
V
V
6
GS
DS
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
°
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25 C
J
7
1
°
5.5V
8
V
20µs PULSE WIDTH
DS
20µs PULSE WIDTH
T = 25 C
J
9
= 50V
10
°
10
11
100
1000
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
IRFB/S/SL31N20DPbF
10
1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
0.1
I =
D
TOP
BOTTOM
30A
V
T , Junction Temperature ( C)
DS
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
5.5V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100