IRF7473 International Rectifier, IRF7473 Datasheet - Page 3

• Manufacturer Part Number: IRF7473
• Description: MOSFET N-CH 100V 6.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7473

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 3180pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7473

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1000
0.01
100
0.1
1000
10
Fig 3. Typical Transfer Characteristics
0.01
Fig 1. Typical Output Characteristics
100
1
0.1
10
1
5
0.1
T = 150 C
J
TOP
BOTTOM 5.5V
6
V
GS
T = 25 C
V DS , Drain-to-Source Voltage (V)
°
J
, Gate-to-Source Voltage (V)
12V
10V
8.0V
7.0V
6.5V
6.0V
7
15V
VGS
°
1
8
6.0V
9
V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25°C
DS
= 25V
10
10
11
12
100
1000
100
Fig 2. Typical Output Characteristics
0.1
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
6.9A
V
DS
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
T , Junction Temperature( C)
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20 40 60 80 100 120 140 160
5.5V
IRF7473
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
10V
3
100