IXTQ450P2 IXYS, IXTQ450P2 Datasheet - Page 2
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IXTQ450P2
Manufacturer Part Number
IXTQ450P2
Description
MOSFET N-CH 500V 16A TO3P
Manufacturer
IXYS
Series
PolarP2™r
Type
PolarP2 Power MOSFETr
Datasheet
1.IXTQ450P2.pdf
(2 pages)
Specifications of IXTQ450P2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
330 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
2530pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-3P
Product
MOSFET Gate Drivers
Rise Time
10 ns
Fall Time
9 ns
Supply Current
16 A
Maximum Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Maximum Turn-off Delay Time
44 ns
Maximum Turn-on Delay Time
16 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
16 A
Output Voltage
500 V
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
16
Rds(on), Max, Tj=25°c, (?)
0.33
Ciss, Typ, (pf)
2280
Qg, Typ, (nc)
43
Trr, Typ, (ns)
400
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
thCS
g(on)
gs
gd
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
TO-220 (IXTP) Outline
Resistive Switching Times
V
R
I
V
Test Conditions
V
V
V
TO-220
TO-3P & TO-247
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 16A, -di/dt = 100A/μs
= I
= 100V, V
= 10V, V
= 10Ω (External)
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
ADVANCE TECHNICAL INFORMATION
GS
1 - Gate
3 - Source
= 0V, Note 1
D
DS
DS
GS
DS
= 0.5 • I
= 0.5 • V
= 25V, f = 1MHz
= 0V
4,835,592
4,881,106
= 0.5 • V
2 - Drain
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
Characteristic Values
Min.
12
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
2530
Typ.
0.50
0.25
257
400
20
44
25
16
10
43
16
12
9
0.42 °C/W
Max.
Max.
6,404,065 B1
6,534,343
6,583,505
1.3
16
64
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTP450P2 IXTQ450P2
TO-247 (IXTH) Outline
TO-3P (IXTQ) Outline
6,727,585
6,771,478 B2 7,071,537
Dim.
Terminals: 1 - Gate
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
2
4.7
2.2
2.2
1.0
Millimeter
.4
3 - Source
3
7,005,734 B2
7,063,975 B2
21.46
16.26
20.32
Max.
e
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
IXTH450P2
.8
∅ P
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
2 - Drain
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216