IXTA220N055T IXYS, IXTA220N055T Datasheet - Page 2

• Manufacturer Part Number: IXTA220N055T
• Description: MOSFET N-CH 55V 220A TO-263
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTA220N055T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 220A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 158nc @ 10V
• Input Capacitance (ciss) @ Vds: 7200pF @ 25V
• Power - Max: 430W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 220 A
• Power Dissipation: 430 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 220
• Rds(on), Max, Tj=25°c, (?): 0.0040
• Ciss, Typ, (pf): 7200
• Qg, Typ, (nc): 158
• Trr, Typ, (ns): 70
• Trr, Max, (ns): -
• Pd, (w): 430
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
SM
d(on)
d(off)
f
S
r
rr
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
J
oss
thCH
SD
iss
rss
g(on)
gs
gd
thJC
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
J
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
2. On through-hole packages, R
location must be 5 mm or less from the package body.
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-220
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, V
= 25 A, -di/dt = 100 A/µs
= 25 V, V
= 10 V; I
= 5 Ω (External)
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V
= 0 V, V
= 10 V, V
GS
DS
D
GS
DS
DS
= 60 A, Note 1
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 30 V, I
4,835,592
4,850,072
4,881,106
DSS
D
JM
, I
4,931,844
5,017,508
5,034,796
= 25 A
D
= 25 A
DS(on)
Kelvin test contact
5,049,961
5,063,307
5,187,117
Min.
Min.
5,237,481
5,381,025
5,486,715
75
Characteristic Values
Characteristic Values
7200
1270
Typ.
Typ.
0.50
120
285
158
36
62
53
53
42
46
70
6,162,665
6,259,123 B1
6,306,728 B1
0.35 ° C/W
Max.
Max.
220
600
1.0
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
ns
ns
S
V
A
A
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Pins: 1 - Gate
3 - Source 4, TAB - Drain
14.61
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Min.
3 - Source 4, TAB - Drain
Millimeter
0
6,727,585
6,759,692
6771478 B2
IXTP220N055T
IXTA220N055T
10.29
15.88
Max.
BSC
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
2 - Drain
2 - Drain
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
Min.
7,005,734 B2
7,063,975 B2
7,071,537
Inches
0
Max.
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029