IRL3502PBF International Rectifier, IRL3502PBF Datasheet - Page 4

• Manufacturer Part Number: IRL3502PBF
• Description: MOSFET N-CH 20V 110A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3502PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 64A, 7V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4700pF @ 15V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL3502PBF

8000
6000
4000
2000
1000
100
10
0
0.5
1
T = 150 C
J
V
V
SD
DS
°
1.0
T = 25 C
V
C
C
C
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
J
GS
iss
rss
oss
C iss
C oss
C rss
=
=
=
=
°
0V,
C
C
C
gs
gd
ds
1.5
+ C
+ C
10
f = 1MHz
gd ,
gd
C
ds
2.0
V
SHORTED
GS
= 0 V
2.5
100
1000
100
10
15
12
9
6
3
0
0
1
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
64A
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
°
G
40
, Drain-to-Source Voltage (V)
BY R
10
80
DS(on)
V
DS
10us
100us
1ms
10ms
= 16V
120
100
160