IRF7458 International Rectifier, IRF7458 Datasheet - Page 2

• Manufacturer Part Number: IRF7458
• Description: MOSFET N-CH 30V 14A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7458

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14A, 16V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2410pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7458

IRF7458
Avalanche Characteristics
Diode Characteristics
Dynamic @ T
Static @ T
Symbol
E
I
V
R
V
V
I
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
Symbol
I
I
t
Q
t
Q
I
AR
DSS
d(on)
d(off)
S
SM
r
f
rr
rr
GSS
V
fs
AS
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
2
g
gs
gd
oss
rr
rr
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Diode Forward Voltage
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
Min. Typ. Max. Units
30
26
–––
–––
––– 0.82
––– 0.68 –––
–––
–––
–––
–––
0.029
2410 –––
1100 –––
–––
–––
–––
–––
–––
––– -200
–––
110
–––
–––
6.3
7.0
8.7
4.6
5.0
39
11
29
10
22
51
87
52
93
–––
100
200
–––
–––
–––
–––
–––
–––
130
140
8.0
9.0
4.0
1.3
–––
20
59
17
13
44
2.3
110
77
78
m
µA
nA
V/°C
nC
ns
nC
nC
pF
ns
ns
V
V
S
V
Typ.
A
–––
–––
I
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs ƒ
T
di/dt = 100A/µs ƒ
MOSFET symbol
integral reverse
D
D
Reference to 25°C, I
GS
GS
GS
DS
DS
DS
GS
GS
J
J
J
J
DS
DS
GS
GS
DD
GS
GS
DS
G
= 11A
= 11A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8
= V
= 24V, V
= 24V, V
= 0V, I
= 16V, I
= 10V, I
= 24V
= -24V
= 15V, I
= 15V
= 15V
= 10V ƒ
= 0V, V
= 15V
= 10V ƒ
= 0V
GS
, I
D
S
F
D
DS
D
D
D
Conditions
= 250µA
GS
GS
S
F
Conditions
Conditions
= 11A, V
= 11A, V
= 250µA
= 14A
= 11A
= 11A
= 11A, V
= 11A, V
= 16V
Max.
= 0V, T
280
= 0V
11
www.irf.com
D
GS
R
ƒ
ƒ
= 1mA
= 20V
J
GS
R
=20V
= 125°C
= 0V
G
= 0V
Units
mJ
A
ƒ
D
S