IRF4905PBF International Rectifier, IRF4905PBF Datasheet
IRF4905PBF
Specifications of IRF4905PBF
Available stocks
Related parts for IRF4905PBF
IRF4905PBF Summary of contents
Page 1
... Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA IRF4905PbF HEXFET TO-220AB Max. @ -10V GS @ -10V GS -260 200 ± 20 930 -5.0 - 175 300 (1.6mm from case ) 10 lbf• ...
Page 2
... IRF4905PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
Page 3
... BOTTOM - 4.5V 100 100 0 Drain-to-Source Voltage (V) DS Fig 2. Typical Output Characteristics 2 -64A D 1.5 1.0 0.5 0 -60 -40 - Junction Temperature (°C) J Fig 4. Normalized On-Resistance Vs. Temperature IRF4905PbF -4.5V 20µs PULSE WIDTH T = 175° 100 V = -10V 100 120 140 160 180 ...
Page 4
... IRF4905PbF 7000 1MHz iss 6000 rss oss ds gd 5000 C iss 4000 C oss 3000 2000 C rss 1000 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 T = 175° 25° 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...
Page 5
... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit t d(on 10% 150 175 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF4905PbF D.U. d(off ...
Page 6
... IRF4905PbF D.U DRIVER -20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 2500 2000 1500 1000 15V 500 0 25 Starting T , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy ...
Page 7
... Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ 5% *** V = 5.0V for Logic Level and 3V Drive Devices GS Fig 14. For P-Channel HEXFETS IRF4905PbF Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + G controlled by Duty Factor "D" ...
Page 8
... IRF4905PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH ...
Page 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...