IRF7739L2TR1PBF International Rectifier, IRF7739L2TR1PBF Datasheet - Page 5

• Manufacturer Part Number: IRF7739L2TR1PBF
• Description: MOSFET N-CH 40V 375A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7739L2TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 mOhm @ 160A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 375A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 330nC @ 10V
• Input Capacitance (ciss) @ Vds: 11880pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric L8
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 270 A
• Power Dissipation: 125 W
• Gate Charge Qg: 220 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7739L2TR1PBFTR

Fig 12. Maximum Drain Current vs. Case Temperature
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Fig 10. Typical Source-Drain Diode Forward Voltage
1000
300
250
200
150
100
100
50
1.0
10
0
25
0.0
T J = 175°C
50
0.5
V SD , Source-to-Drain Voltage (V)
T C , Case Temperature (°C)
T J = 25°C
75
1.0
Fig 14. Maximum Avalanche Energy vs. Drain Current
100
1.5
1100
1000
125
900
800
700
600
500
400
300
200
100
2.0
0
V GS = 0V
25
150
2.5
Starting T J , Junction Temperature (°C)
50
175
3.0
75
100
10000
TOP
BOTTOM 160A
125
1000
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Fig11. Maximum Safe Operating Area
10
Fig 13. Typical Threshold Voltage vs.
1
-75 -50 -25 0
0
150
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 250µA
I D = 1.0mA
I D = 1.0A
I D
29A
46A
Junction Temperature
V DS , Drain-to-Source Voltage (V)
175
DC
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
1
25 50 75 100 125 150 175 200
1msec
100µsec
10
100
5