IXTA170N075T2 IXYS, IXTA170N075T2 Datasheet - Page 5

• Manufacturer Part Number: IXTA170N075T2
• Description: MOSFET N-CH 75V 170A TO-263
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTA170N075T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 109nC @ 10V
• Input Capacitance (ciss) @ Vds: 6860pF @ 25V
• Power - Max: 360W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 170 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 170
• Rds(on), Max, Tj=25°c, (?): 0.0054
• Ciss, Typ, (pf): 6860
• Qg, Typ, (nc): 109
• Trr, Typ, (ns): 63
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
28
26
24
22
20
18
16
14
60
55
50
45
40
35
30
25
20
15
10
18
17
16
15
14
13
12
11
5
40
2
25
t
T
V
Switching Times vs. Gate Resistance
r
J
DS
Switching Times vs. Drain Current
R
V
V
35
= 125ºC, V
4
G
GS
DS
60
= 38V
T
Rise Time vs. Junction Temperature
= 3.3Ω
T
J
= 10V
= 38V
J
= 25ºC
Fig. 17. Resistive Turn-off
= 125ºC
Fig. 15. Resistive Turn-on
45
6
t
80
Fig. 13. Resistive Turn-on
d(on)
GS
55
8
= 10V
T
J
- - - -
R
I
- Degrees Centigrade
D
I
G
100
D
65
= 170A, 85A
10
- Ohms
- Amperes
I
D
= 170A
t
R
V
f
DS
G
75
12
120
= 3.3Ω, V
= 38V
85
14
I
D
140
t
GS
d(off)
= 85A
95
= 10V
16
- - - -
160
105
18
115
180
20
44
40
36
32
28
24
20
16
54
50
46
42
38
34
30
26
22
18
14
10
125
160
140
120
100
26
25
24
23
22
21
20
19
18
17
16
15
18
17
16
15
14
13
12
11
80
60
40
20
25
40
2
Switching Times vs. Junction Temperature
Switching Times vs. Gate Resistance
t
R
V
t
T
V
R
V
V
35
f
I
f
G
DS
J
DS
I
D
GS
DS
G
= 125ºC, V
4
= 3.3Ω, V
D
= 85A
= 3.3Ω
= 38V
60
= 38V
= 10V
= 38V
= 85A
45
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
6
Rise Time vs. Drain Current
t
Fig. 14. Resistive Turn-on
d(off)
t
GS
55
d(off)
80
T
GS
J
I
= 10V
8
= 10V
- Degrees Centigrade
D
- - - -
- - - -
= 170A
65
I
D
R
10
- Amperes
G
100
I
D
- Ohms
75
= 170A
12
T
85
120
T
J
J
= 125ºC
IXTA170N075T2
IXTP170N075T2
= 25ºC
14
95
140
16
105
18
115
160
20
125
150
130
110
90
70
50
30
10
40
38
36
34
32
30
28
26
24
22
20
18
180