IRF7403 International Rectifier, IRF7403 Datasheet - Page 2
![MOSFET N-CH 30V 8.5A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7403
Manufacturer Part Number
IRF7403
Description
MOSFET N-CH 30V 8.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7403.pdf
(9 pages)
Specifications of IRF7403
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
57nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7403
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7403PBF
Manufacturer:
IOR
Quantity:
100
Part Number:
IRF7403TRPBF
Manufacturer:
IR
Quantity:
20 000
Electrical Characteristics @ T
IRF7403
Source-Drain Ratings and Characteristics
Notes:
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
R
I
L
L
GSS
d(on)
d(off)
S
SM
on
DSS
r
f
rr
V
fs
D
S
(BR)DSS
GS(th)
SD
DS(ON)
g
gs
gd
iss
oss
rss
rr
(BR)DSS
Repetitive rating; pulse width limited by
I
T
max. junction temperature. ( See fig. 11 )
SD
J
150°C
4.0A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Internal Source Inductance
180A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
Pulse width
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.024 –––
Surface mounted on FR-4 board, t
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1200 –––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
8.4
30
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
––– 0.022
––– 0.035
–––
–––
–––
–––
–––
–––
–––
450
160
–––
––– -100
–––
2.5
–––
4.0
–––
10
37
42
40
52
93
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
140
1.0
6.8
1.0
18
3.1
25
57
78
300µs; duty cycle
34
V/°C
nH
µA
nA
ns
nC
pF
nC
ns
A
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
R
R
Between lead tip
and center of die contact
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
I
V
T
di/dt = 100A/µs
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= 4.0A
= 4.0A
= 25°C, I
= 25°C, I
= 3.7
= 6.0
= V
= 15V, I
= 24V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 10V, See Fig. 6 and 12
= 15V
= 0V
2%.
GS
, I
D
See Fig. 10
10sec.
S
F
D
D
D
Conditions
D
= 250µA
GS
GS
Conditions
= 4.0A
= 2.0A, V
= 4.0A
= 250µA
= 4.0A
= 3.4A
= 0V
= 0V, T
D
= 1mA
GS
J
G
= 125°C
= 0V
G
S
+L
D
S
D
)
S
D