IRFP9140NPBF International Rectifier, IRFP9140NPBF Datasheet - Page 4
![MOSFET P-CH 100V 23A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFP9140NPBF
Manufacturer Part Number
IRFP9140NPBF
Description
MOSFET P-CH 100V 23A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFP9140NPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
117 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
97nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
P
Current, Drain
-23 A
Gate Charge, Total
97 nC
Package Type
TO-247AC
Polarization
P-Channel
Power Dissipation
140 W
Resistance, Drain To Source On
0.117 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
51 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
5.3 S
Voltage, Breakdown, Drain To Source
-100 V
Voltage, Drain To Source
–100 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 21 A
Mounting Style
Through Hole
Gate Charge Qg
64.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP9140NPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP9140NPBF
Manufacturer:
TOSHIBA
Quantity:
201
Company:
Part Number:
IRFP9140NPBF
Manufacturer:
IR
Quantity:
193
100
3000
2500
2000
1500
1000
0.1
10
500
1
0.2
0
1
T = 175°C
J
0.4
-V
-V
SD
DS
V
C
C
C
, Source-to-Drain Voltage (V)
0.6
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
C
C
C
oss
rss
iss
= 0V,
= C
= C
= C
0.8
gs
ds
gd
T = 25°C
J
+ C
+ C
10
1.0
gd
gd
f = 1MHz
, C
1.2
ds
SHORTED
V
GS
1.4
= 0V
1.6
100
A
A
1000
100
10
20
16
12
1
8
4
0
1
0
T
T
Single Pulse
I
D
C
J
= -11A
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
-V
DS
20
Q , Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
10
40
BY R
V
V
V
DS
DS
DS
DS(on)
= -80V
= -50V
= -20V
FOR TEST CIRCUIT
60
SEE FIGURE 13
100
100µs
1ms
10ms
80
1000
100
A
A