IRF7495PBF International Rectifier, IRF7495PBF Datasheet

MOSFET N-CH 100V 7.3A 8-SOIC

IRF7495PBF

Manufacturer Part Number
IRF7495PBF
Description
MOSFET N-CH 100V 7.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF7495PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 4.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
7.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
51nC @ 10V
Input Capacitance (ciss) @ Vds
1530pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Current, Drain
7.3 A
Gate Charge, Total
34 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
18 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
10 ns
Time, Turn-on Delay
8.7 ns
Transconductance, Forward
11 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.022Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Continuous Drain Current
7.3A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF7495PBF
l
l
Benefits
l
l
l
Applications
www.irf.com
Notes  through † are on page 8
Absolute Maximum Ratings
V
V
I
I
I
P
dv/dt
T
T
Thermal Resistance
R
R
D
D
DM
J
STG
DS
GS
D
θJL
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Lead-Free
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
@T
A
A
A
= 25°C
= 100°C
= 25°C
OSS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
to Simplify Design, (See
Parameter
Parameter
h
GS
GS
@ 10V
@ 10V
e
V
100V
DSS
G
S
S
S
1
2
3
4
Top View
22m @V
Typ.
–––
–––
R
DS(on)
HEXFET
-55 to + 150
8
7
6
5
IRF7495PbF
Max.
± 20
0.02
100
7.3
4.6
2.5
7.3
58
D
D
D
D
A
A
GS
max
®
= 10V
Max.
20
50
Power MOSFET
SO-8
7.3A
Units
Units
W/°C
°C/W
I
V/ns
°C
W
D
V
A
1
9/21/04

Related parts for IRF7495PBF

IRF7495PBF Summary of contents

Page 1

... Junction-to-Ambient (PCB Mount) R θJA Notes  through † are on page 8 www.irf.com V DSS 22m @V 100V Top View Parameter @ 10V GS @ 10V GS h Parameter Typ. ––– e ––– IRF7495PbF ® HEXFET Power MOSFET R max I DS(on 10V 7. SO-8 Max. Units 100 V ± ...

Page 2

... IRF7495PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... Fig 2. Typical Output Characteristics 2 7. 10V 2.0 1.5 1.0 0 -60 -40 -20 0 Fig 4. Normalized On-Resistance IRF7495PbF VGS TOP 15V 10V 8.0V 5.0V 4.5V BOTTOM 4.5V 20µs PULSE WIDTH Tj = 150° 100 Drain-to-Source Voltage ( 100 120 140 160 180 Junction Temperature (° ...

Page 4

... IRF7495PbF 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss C rss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100.00 10. 150°C 1. 25°C 0.10 0.01 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 12 4.4A 10.0 8 ...

Page 5

... SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 d(on) Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) IRF7495PbF + - ≤ 1 ≤ 0 d(off 100 5 ...

Page 6

... IRF7495PbF 10V Drain Current (A) Fig 12. On-Resistance vs. Drain Current VCC DUT 0 1K Fig 14a&b. Basic Gate Charge Test Circuit and Waveform V (BR)DSS 20V Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 13. On-Resistance vs. Gate Voltage Q G 500 400 Charge 300 200 15V ...

Page 7

... L 7 6.46 [.255] 3X 1.27 [.050] DATE CODE (YWW DESIGNATES LEAD-FREE PRODUCT (OPTIONAL LAS T DIGIT OF THE YEAR WW = WEEK XXXX A = ASSEMBLY SITE CODE F7101 LOT CODE PART NUMBER IRF7495PbF INCHES MILLIMETERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 ...

Page 8

... IRF7495PbF SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ...

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