IRFU4615PBF International Rectifier, IRFU4615PBF Datasheet - Page 6

• Manufacturer Part Number: IRFU4615PBF
• Description: MOSFET N-CH 150V 33A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU4615PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 50V
• Power - Max: 144W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 144 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 16. Threshold Voltage vs. Temperature
-75 -50 -25
0
I F = 21A
V R = 100V
T J = 25°C
T J = 125°C
200
I D = 100µA
I D = 250uA
ID = 1.0mA
ID = 1.0A
T J , Temperature ( °C )
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400
di F /dt (A/µs)
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f
0
I F = 21A
V R = 100V
T J = 25°C
T J = 125°C
200
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di F /dt (A/µs)
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0
800
f
0
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I F = 14A
V R = 100V
T J = 25°C
T J = 125°C
I F = 14A
V R = 100V
T J = 25°C
T J = 125°C
200
1000
200
400
di F /dt (A/µs)
400
di F /dt (A/µs)
600
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f
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