IRFZ46NPBF International Rectifier, IRFZ46NPBF Datasheet - Page 3

• Manufacturer Part Number: IRFZ46NPBF
• Description: MOSFET N-CH 55V 53A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFZ46NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1696pF @ 25V
• Power - Max: 107W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 53 A
• Gate Charge, Total: 72 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 107 W
• Resistance, Drain To Source On: 16.5 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 52 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 19 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0165Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 53A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 46 A
• Mounting Style: Through Hole
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ46NPBF

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1000
1000
100
100
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
10
1
1
0.1
4
TOP
BOTTOM
V
5
DS
V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
6
T = 25 C
J
1
7
°
4.5V
20µs PULSE WIDTH
T = 25 C
J
8
V
20µs PULSE WIDTH
T = 175 C
DS
J
10
= 25V
°
9
°
10
100
11
1000
Fig 2. Typical Output Characteristics
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20 0
TOP
BOTTOM
I =
D
V
53A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
4.5V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
GS
°
=
10V
3
100