IRFZ34VSPBF International Rectifier, IRFZ34VSPBF Datasheet - Page 2

• Manufacturer Part Number: IRFZ34VSPBF
• Description: MOSFET N-CH 60V 30A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ34VSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1120pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ34VSPBF

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

‚
ƒ
Notes:
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
E
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
2
fs
D
S
(BR)DSS
GS(th)
AS
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
T
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
J
G
≤ 175°C
≤ 30A di/d ≤ 250A/µs, V
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 180µH
AS
= 30A. (See Figure 12)

Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
‚…
„
…
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
application note #AN-994.
For recommended footprint and soldering techniques refer to
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Uses IRFZ34V data and test conditions.
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Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
60
15
–––
–––
–––
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–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.062 –––
1120 –––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
250
260
–––
–––
–––
59
99
10
65
31
40
70
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
110
150
4.0
1.6
28
25
49
12
18
81
120
30
V/°C
mΩ
µA
nA
nC
ns
nH
mJ
nC
pF
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 30A
= 30A
= 25°C, I
= 25°C, I
= 12Ω
= 0V, I
= 10V, I
= V
= 25V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 48V
= 10V, See Fig. 6 and 13
= 30V
= 10V, See Fig. 10 „
= 0V
= 25V
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
Conditions
GS
GS
= 30A
= 30A, V
= 18A
= 250µA
= 18A„
„…
= 0V
= 0V, T
D
www.irf.com
…
GS
= 1mA
„
J
…
= 150°C
= 0V
G
…
G
…
S
„
+L
…
D
S
D
)
S
D