IRF6609 International Rectifier, IRF6609 Datasheet - Page 2

• Manufacturer Part Number: IRF6609
• Description: MOSFET N-CH 20V 31A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6609

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 69nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 6290pF @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 m Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 31 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 9.8 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 95 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6609TR

∆ΒV
∆V
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
E
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
2
GS(th)
AS (Thermally limited)
AR
SD
DS(on)
iss
oss
rss
g
sw
oss
rr
Q
Q
Q
Q
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 25°C (unless otherwise specified)
Parameter
Parameter
Ù
Parameter
gs2
Ù
+ Q
gd
)
™
Min. Typ. Max. Units
Min. Typ. Max. Units
1.55
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
91
6290
1850
0.80
-6.1
–––
–––
–––
–––
–––
–––
–––
860
–––
–––
1.6
2.0
4.7
9.8
15
46
15
15
11
20
26
24
95
26
32
26
Typ.
2.45
-100
–––
––– mV/°C
––– mV/°C
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
250
2.0
2.6
1.0
1.2
69
89
48
39
mΩ
µA
nA
nC
nC
nC
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 16
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
See Fig. 12, 13, 18a,
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
= 17A
= 25A
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= V
= 16V, V
= 16V, V
= 20V
= -20V
= 10V, I
= 10V
= 4.5V
= 10V, V
= 16V, V
= 0V
= 10V
GS
Max.
18b,
240
, I
D
Conditions
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
GS
GS
= 250µA
= 25A, V
= 25A
= 25A
= 31A
= 25A
= 0V
= 0V, T
= 0V
e
= 4.5V
www.irf.com
D
e
e
= 1mA
Ãe
GS
J
G
= 150°C
= 0V
Units
mJ
mJ
A
e
D
S