IRL3715ZPBF International Rectifier, IRL3715ZPBF Datasheet - Page 8
![MOSFET N-CH 20V 50A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRL3715ZPBF
Manufacturer Part Number
IRL3715ZPBF
Description
MOSFET N-CH 20V 50A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRL3715ZPBF.pdf
(13 pages)
Specifications of IRL3715ZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2.55V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
870pF @ 10V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
15.5 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
50 A
Power Dissipation
45 W
Mounting Style
Through Hole
Gate Charge Qg
7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL3715ZPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRL3715ZPBF
Manufacturer:
SKYWORKS
Quantity:
2 963
Control FET
P
P
Power MOSFET Selection for Non-Isolated DC/DC Converters
loss
8
loss
This can be expanded and approximated by;
= I
+ I ×
+ Q
+
= P
(
⎛
⎜
⎝
(
⎛
⎝
Q
rms
conduction
g
2
oss
× V
2
Q
× R
i
× V
g
gd
g
× f
ds(on )
in
× V
+ P
× f
)
in
)
switching
× f
⎞
⎠
⎞
⎟ + I ×
⎠
+ P
⎛
⎜
⎝
drive
Q
+ P
i
gs 2
g
× V
output
in
× f
⎞
⎟
⎠
Synchronous FET
by;
*dissipated primarily in Q1.
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q
verse recovery charge Q
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
of the converter and therefore sees transitions be-
tween ground and V
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Q
potential for Cdv/dt turn on.
Figure A: Q
P
P
loss
loss
The power loss equation for Q2 is approximated
For the synchronous MOSFET Q2, R
The drain of Q2 is connected to the switching node
= P
= I
+ Q
+
(
(
⎛
⎜
⎝
conduction
rms
Q
oss
g
2
oss
2
Characteristic
× V
gd
× R
/Q
× V
g
gs1
+ P
ds(on)
× f
in
in
must be minimized to reduce the
. As Q1 turns on and off there is
drive
× f
)
)
rr
⎞
⎠
+ P
both generate losses that
+ Q
output
(
*
rr
× V
www.irf.com
in
ds(on)
× f
oss
is an im-
and re-
)