IRF7422D2 International Rectifier, IRF7422D2 Datasheet - Page 3

• Manufacturer Part Number: IRF7422D2
• Description: MOSFET P-CH 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7422D2

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 610pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7422D2

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100
0.1
100
10
Fig 3. Typical Transfer Characteristics
0.1
10
Fig 1. Typical Output Characteristics
1
1
1.5
0.01
TOP
BOTTOM - 1.5V
2.0
-V
-V
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
GS
VGS
DS
T = 25°C
0.1
J
2.5
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
3.0
1
3.5
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
-1.5V
= -15V
T = 150°C
Power Mosfet Characteristics
J
4.0
10
4.5
5.0
100
A
A
100
0.1
10
2.0
1.5
1.0
0.5
0.0
Fig 2. Typical Output Characteristics
1
0.01
Fig 4. Normalized On-Resistance
-60
TOP
BOTTOM - 1.5V
I
D
-40
= -3.6A
-V
T , Junction Temperature (°C)
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
VGS
-20
J
DS
Vs. Temperature
0.1
, Drain-to-Source Voltage (V)
0
20
40
IRF7422D2
1
60
20µs PULSE WIDTH
T = 150°C
J
-1.5V
80
100 120 140 160
10
V
GS
= -4.5V
3
100
A
A