IRF630NPBF International Rectifier, IRF630NPBF Datasheet

MOSFET N-CH 200V 9.3A TO-220AB

IRF630NPBF

Manufacturer Part Number
IRF630NPBF
Description
MOSFET N-CH 200V 9.3A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF630NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 25V
Power - Max
82W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
N
Current, Drain
9.3 A
Gate Charge, Total
35 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
82 W
Resistance, Drain To Source On
0.3 Ohm
Resistance, Thermal, Junction To Case
1.83 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
27 ns
Time, Turn-on Delay
7.9 ns
Transconductance, Forward
4.9 S
Voltage, Breakdown, Drain To Source
200 V
Voltage, Drain To Source
200 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
9.5 A
Mounting Style
Through Hole
Gate Charge Qg
23.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF630NPBF

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IRF630NPBF Summary of contents

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... IRF630NPbF/SPbF/LPbF Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH E XAMPL HIS 1010 ...

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