IRF9Z34NPBF International Rectifier, IRF9Z34NPBF Datasheet - Page 4

• Manufacturer Part Number: IRF9Z34NPBF
• Description: MOSFET P-CH 55V 19A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9Z34NPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: P
• Current, Drain: -19 A
• Gate Charge, Total: 35 nC
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 68 W
• Resistance, Drain To Source On: 0.1 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 30 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 4.2 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 17 A
• Mounting Style: Through Hole
• Gate Charge Qg: 23.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF9Z34NPBF

1200
1000
800
600
400
200
100
0.1
10
0
1
0.2
1
T = 175°C
J
0.4
-V
-V
SD
DS
V
C
C
C
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
GS
iss
rss
oss
C
C
C
0.6
oss
iss
rss
= 0V,
= C
= C
= C
gs
gd
ds
0.8
T = 25°C
+ C
+ C
10
J
gd
gd
f = 1MHz
1.0
, C
ds
1.2
SHORTED
V
GS
1.4
= 0V
100
1.6
A
A
1000
100
10
20
16
12
1
8
4
0
1
0
T
T
Single Pulse
I
D
C
J
= -10A
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
-V
DS
Q , Total Gate Charge (nC)
10
G
, Drain-to-Source Voltage (V)
BY R
V
V
DS
DS
10
20
DS(on)
= -44V
= -28V
FOR TEST CIRCUIT
SEE FIGURE 13
30
1ms
10ms
10µs
100µs
100
40
A
A