IRF6621TR1PBF International Rectifier, IRF6621TR1PBF Datasheet - Page 8

• Manufacturer Part Number: IRF6621TR1PBF
• Description: MOSFET N-CH 30V 12A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6621TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 17.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1460pF @ 15V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 42 W
• Gate Charge Qg: 11.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6621TR1PBFTR

DirectFET™ Outline Dimension, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DirectFET™ Part Marking
8
CODE
A
B
C
D
E
F
G
H
K
L
M
R
P
MIN
4.75
3.70
2.75
0.35
0.48
0.78
0.88
0.78
0.93
2.00
0.616
0.020
0.08
METRIC
DIMENSIONS
MAX
4.85
3.95
2.85
0.45
0.52
0.82
0.92
0.82
0.97
2.10
0.676
0.080
0.17
0.187
0.146
0.108
0.014
0.019
0.031
0.035
0.031
0.037
0.079
0.0235
0.0008
0.003
MIN
IMPERIAL
0.191
0.156
0.112
0.018
0.020
0.032
0.036
0.032
0.038
0.083
0.0274
0.0031
0.007
MAX
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