IRLI520NPBF International Rectifier, IRLI520NPBF Datasheet - Page 2

• Manufacturer Part Number: IRLI520NPBF
• Description: MOSFET N-CH 100V 8.1A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLI520NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.1A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 260 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 7.7 A
• Power Dissipation: 27 W
• Mounting Style: Through Hole
• Gate Charge Qg: 13.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLI520NPBF

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