IRF6604 International Rectifier, IRF6604 Datasheet - Page 9

• Manufacturer Part Number: IRF6604
• Description: MOSFET N-CH 30V 12A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6604

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11.5 mOhm @ 12A, 7V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2270pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MQ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6604TR

www.irf.com
DirectFET™ Outline Dimension, MQ Outline
(Medium Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
1.57
MIN
6.25
4.80
3.85
0.35
0.68
0.68
0.69
0.57
0.23
2.95
0.59
0.03
0.08
METRIC
DIMENSIONS
MAX
5.05
3.95
0.45
0.72
0.72
0.73
0.61
0.27
1.70
3.12
0.70
0.08
0.17
6.35
0.246
0.189
0.152
0.014
0.027
0.027
0.027
0.022
0.009
0.062
0.116
0.023
0.001
0.003
MIN
IMPERIAL
0.250
0.199
0.156
0.018
0.028
0.028
0.029
0.024
0.011
0.067
0.123
0.028
0.003
0.007
MAX
9