IXTY44N10T IXYS, IXTY44N10T Datasheet

MOSFET N-CH 100V 44A TO-252

IXTY44N10T

Manufacturer Part Number
IXTY44N10T
Description
MOSFET N-CH 100V 44A TO-252
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTY44N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
4.5V @ 25µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
1262pF @ 25V
Power - Max
130W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.03 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
44 A
Power Dissipation
130 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.03
Ciss, Typ, (pf)
1567
Qg, Typ, (nc)
27.4
Trr, Typ, (ns)
60
Trr, Max, (ns)
-
Pd, (w)
130
Rthjc, Max, (k/w)
1.15
Package Style
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
L
D25
DM
AR
GSS
DSS
L
J
JM
stg
SOLD
GS(th)
DSS
DGR
GSM
AS
D
DS(on)
d
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
T
Package Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-252
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
≤ I
≤ 175° C, R
= 25° C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
TM
DSS
, I
D
D
D
= 250 µA
= 25 µA
= 22 A, Notes 1, 2
G
DS
= 18 Ω
= 0 V
Preliminary Technical Information
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
DSS
TO-252A
IXTP44N10T
IXTY44N10T
JM
Min.
2.5
85
Characteristic Values
-55 ... +175
-40 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
22
± 30
100
100
140
250
130
175
300
260
0.8
25
44
10
± 100
3
3
100
Max.
4.5
30
1
V/ns
m Ω
mJ
µA
nA
µA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
g
g
Features
Advantages
Applications
TO-220 (IXTP)
TO-252 AA (IXTY)
G = Gate
S = Source
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
V
I
R
Electronic Valve Train Systems
Distributed Power Architechtures
High Current Switching
High Voltage Synchronous Recifier
D25
Systems
Applications
DSS
DS(on)
G
and VRMs
D S
G
S
= 100
=
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
44
30 m Ω Ω Ω Ω Ω
DS99646 (11/06)
D (TAB)
D (TAB)
A
V

Related parts for IXTY44N10T

IXTY44N10T Summary of contents

Page 1

... D = ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTP44N10T IXTY44N10T Maximum Ratings 100 = 1 MΩ 100 GS ± TO-252A 25 140 JM 10 250 ≤ DSS 130 -55 ... +175 175 -40 ... +175 300 260 1. Nm/lb.in. 3 0.8 Characteristic Values Min ...

Page 2

... L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTP44N10T IXTY44N10T TO-220 (IXTP) Outline Pins Gate 2 - Drain Source 4, TAB - Drain nC nC °C 140 A Notes: 1 Pulse test: t ≤ 300 µs, duty cycle ≤ ...

Page 3

... Value 175º 25º - 100 110 IXTP44N10T IXTY44N10T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized 22A Value DS(on) D vs. Junction Temperature V = 10V 44A 22A D - 100 125 T ...

Page 4

... IXTP44N10T IXTY44N10T Fig. 8. Transconductance 40ºC J 25ºC 150º Amperes D Fig. 10. Gate Charge V = 50V 10A 1mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds ...

Page 5

... I = 10A 100 - - - - t d(off 10V 125º IXTP44N10T IXTY44N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Ω 10V 25º 50V 125º Amperes D Fig. 16. Resistive Turn-off - - - - d(off Ω 10V 50V 10A 30A 105 T - Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance ...

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