IRF6626 International Rectifier, IRF6626 Datasheet - Page 7

• Manufacturer Part Number: IRF6626
• Description: MOSFET N-CH 30V 16A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6626

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2380pF @ 15V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 4.5 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6626TR

DirectFET™ Substrate and PCB Layout, ST Outline ƒ
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
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SD
Fig 18.
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G
„
+
HEXFET
V
D
D
+
-
®
Re-Applied
Voltage
Power MOSFETs
G
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
S
S
V
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
G = GATE
D = DRAIN
S = SOURCE
Ripple ≤ 5%
Body Diode
Period
D
D
for N-Channel
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
IRF6626
=10V
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