IRF1018ESTRLPBF International Rectifier, IRF1018ESTRLPBF Datasheet - Page 8

• Manufacturer Part Number: IRF1018ESTRLPBF
• Description: MOSFET N-CH 60V 79A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1018ESTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.4 mOhm @ 47A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 79A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 50V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 79 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 46 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF1018ESTRLPBFTR

TO-220AB packages are not recommended for Surface Mount Application.
8
EXAMPLE: T HIS IS AN IRF 1010
Note: "P" in as s embly line pos ition
indicates "Lead - Free"
LOT CODE 1789
AS S EMBLED ON WW 19, 2000
IN T HE AS S EMBLY LINE "C"
INT ERNAT IONAL
RECT IFIER
AS S EMBLY
LOT CODE
LOGO
DAT E CODE
YEAR 0 = 2000
WEEK 19
LINE C
PART NUMB ER
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