IRFU120NPBF International Rectifier, IRFU120NPBF Datasheet - Page 3

• Manufacturer Part Number: IRFU120NPBF
• Description: MOSFET N-CH 100V 9.4A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU120NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 5.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Current, Drain: 9.4 A
• Gate Charge, Total: 25 nC
• Package Type: I-Pak (TO-251AA)
• Polarization: N-Channel
• Power Dissipation: 48 W
• Resistance, Drain To Source On: 0.21 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 32 ns
• Time, Turn-on Delay: 4.5 ns
• Transconductance, Forward: 2.7 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.1 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 16.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFU120NPBF

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