IRFU220NPBF International Rectifier, IRFU220NPBF Datasheet - Page 2

• Manufacturer Part Number: IRFU220NPBF
• Description: MOSFET N-CH 200V 5A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU220NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 300pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Channel Type: N
• Current, Drain: 5 A
• Gate Charge, Total: 15 nC
• Package Type: I-Pak (TO-251AA)
• Polarization: N-Channel
• Power Dissipation: 43 W
• Resistance, Drain To Source On: 0.6 Ohm
• Resistance, Thermal, Junction To Case: 3.5 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 6.4 ns
• Transconductance, Forward: 2.6 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFU220NPBF

Diode Characteristics
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
R
E
I
E
R
R
R
V
∆V
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
2
fs
AS
AR
(BR)DSS
DS(on)
GS(th)
θJC
θJA
θJA
gs
gd
iss
oss
rss
oss
oss
oss
SD
g
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
2.6
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.23
–––
–––
–––
–––
–––
–––
––– -100
–––
300
300
–––
–––
–––
320
2.4
6.1
6.4
15
11
20
12
53
15
23
46
90
–––
–––
600
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
140
480
4.0
3.6
9.2
1.3
25
23
5.0
20
V/°C
mΩ
µA
nA
nC
ns
nC
pF
ns
V
V
S
V
Typ.
Typ.
–––
–––
–––
–––
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
Reference to 25°C, I
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 2.9A
= 2.9A
= 25°C, I
= 25°C, I
= 24Ω
= V
= 200V, V
= 160V, V
= 50V, I
= 160V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V,
= 100V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 2.9A, V
= 2.9A
= 250µA
= 2.9A
= 2.9A
GS
GS
= 0V to 160V …
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
110
2.9
4.3
3.5
46
50
= 0V
= 0V, T
www.irf.com
D
= 1mA „
GS
„
J
G
= 0V „
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
S
D
)