IRF7451TRPBF International Rectifier, IRF7451TRPBF Datasheet

MOSFET N-CH 150V 3.6A 8-SOIC

IRF7451TRPBF

Manufacturer Part Number
IRF7451TRPBF
Description
MOSFET N-CH 150V 3.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7451TRPBF.pdf (8 pages)

Specifications of IRF7451TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
990pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
3.6 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
28 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7451PBFTR
IRF7451TRPBF
IRF7451TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7451TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Amily Shenzhen XNWY Technology Co., Ltd Amily Shenzhen XNWY Technology Co., Ltd
Part Number:
IRF7451TRPBF
0
Company:
H&T Electronics H&T Electronics
Part Number:
IRF7451TRPBF
Quantity:
10 420
l
l
l
Thermal Resistance
l
l
Absolute Maximum Ratings
www.irf.com
Applications
I
I
I
P
V
dv/dt
T
T
Notes  through † are on page 8
Benefits
Symbol
R
R
D
D
DM
J
STG
D
GS
θJL
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
@T
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
High frequency DC-DC converters
Lead-Free
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
to Simplify Design, (See
Parameter
Parameter
†
†
SMPS MOSFET
GS
GS
@ 10V
@ 10V
G
S
S
S
V
150V
DSS
1
2
3
4
Top View
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
-55 to + 150
8
7
6
5
R
Max.
0.02
± 30
3.6
2.9
2.5
7.9
DS(on)
29
D
D
D
D
A
A
0.09W
IRF7451PbF
®
Power MOSFET
Max.
max
20
50
SO-8
PD- 95725
Units
Units
W/°C
3.6A
°C/W
V/ns
W
°C
I
A
V
D
1
8/10/04

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IRF7451TRPBF Summary of contents

Page 1

Applications High frequency DC-DC converters l l Lead-Free Benefits Low Gate to Drain Charge to Reduce l Switching Losses l Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage l and ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T = 150 C ° ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = 1000 Ciss Coss 100 Crss ...

Page 5

T , Case Temperature ( Ambient Temperature (°C) A Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 ...

Page 6

VGS = 10V 0.080 0.078 0.075 0.073 0.070 Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50KΩ .2µF 12V ...

Page 7

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 8

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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