IRF7413PBF International Rectifier, IRF7413PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7413PBF
• Description: MOSFET N-CH 30V 13A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7413PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 7.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.011Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 13A
• Power Dissipation: 2.5W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
100
10
10
1
1
3.0
0.1
T = 150°C
J
V
V
GS
DS
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
3.5
T = 25°C
J
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
3.0V
= 10V
4.0
TOP
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
4.5
10
A
A
100
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60
I
D
-40
= 7.3A
V
T , Junction Temperature (°C)
-20
J
DS
, Drain-to-Source Voltage (V)
0
20
40
1
60
20µs PULSE WIDTH
T = 150°C
J
80
100 120 140 160
3.0V
V
TOP
BOTTOM 3.0V
GS
= 10V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
3
10
A
A