IRLR3410TRPBF International Rectifier, IRLR3410TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLR3410TRPBF
• Description: MOSFET N-CH 100V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLR3410TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.105Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 17A
• Power Dissipation: 79W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 155 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 26 ns
• Gate Charge Qg: 22.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 53 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLR3410PBFTR

IRLR/U3410PbF
4
1400
1200
1000
100
800
600
400
200
10
1
0.4
0
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
C
C
C
V
V
Drain-to-Source Voltage
oss
iss
rss
SD
0.6
DS
Forward Voltage
, Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
T = 175°C
GS
iss
rss
oss
J
= 0V,
= C
= C
= C
0.8
gs
gd
ds
+ C
+ C
10
T = 25°C
gd
J
gd
f = 1MHz
1.0
, C
ds
SHORTED
1.2
V
GS
= 0V
1.4
100
A
A
1000
100
10
15
12
Fig 8. Maximum Safe Operating Area
1
9
6
3
0
1
0
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
I
C
J
D
= 9.0A
= 25°C
= 175°C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
10
Q , Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
10
V
V
V
DS
DS
DS
20
BY R
= 80V
= 50V
= 20V
DS(on)
FOR TEST CIRCUIT
30
SEE FIGURE 13
100
www.irf.com
10µs
100µs
1ms
10ms
40
1000
50
A
A