IRF7403TRPBF International Rectifier, IRF7403TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7403TRPBF
• Description: MOSFET N-CH 30V 8.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7403TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 8.5 A
• Gate Charge, Total: 57 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.022 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 42 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 8.4 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.5 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 38 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7403PBFTR; IRF7403TRPBF; IRF7403TRPBFTR

Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-