IRF7807D2TRPBF International Rectifier, IRF7807D2TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7807D2TRPBF
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7807D2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7807D2PBFTR; IRF7807D2TRPBF; IRF7807D2TRPBFTR

100
Fig 3. Typical Reverse Output Characteristics
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10
70
60
50
40
30
20
10
1
0
Fig 1. Typical Output Characteristics
0.1
0
TOP
BOTTOM 2.5V
TOP
BOTTOM 0.0V
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
0.2
VGS
4.5V
3.5V
3.0V
VGS
4.5V
3.5V
3.0V
2.5V
2.0V
0.4
380µs PULSE WIDTH
Tj = 25°C
1
380µs PULSE WIDTH
Tj = 25°C
0.6
2.5V
0.0 V
0.8
10
1
Fig 4. Typical Reverse Output Characteristics
100
10
1
70
60
50
40
30
20
10
0.1
0
TOP
BOTTOM 2.5V
0
Fig 2. Typical Output Characteristics
TOP
BOTTOM 0.0V
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
0.2
VGS
4.5V
3.5V
3.0V
VGS
4.5V
3.5V
3.0V
2.5V
2.0V
0.4
380µs PULSE WIDTH
Tj = 150°C
1
380µS PULSE WIDTH
Tj = 150°C
0.6
O.OV
2.5V
0.8
3
10
1